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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV DSS
I DSS
Drain-Source Breakdown Voltage V GS = 0V, I D =10 μ A
Zero Gate Voltage Drain Current V DS = 60V, V GS = 0V
V DS = 60V, V GS = 0V, T J = 125 ° C
60
1.0
0.5
V
μ A
mA
I GSS
Gate-Body Leakage
V GS = ±20V, V DS = 0V
±10
μ A
On Characteristics (Note1)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
1.1
2.1
V
R DS(ON) Static Drain-Source
On-Resistance
V DS(ON) Drain-Source On-Voltage
V GS = 10V, I D = 500mA
V GS = 10V, I D = 500mA, T J = 100 ° C
V GS = 5V, I D = 50mA
V GS = 5V, I D = 50mA, T J = 100 ° C
V GS = 10V, I D = 500mA
V GS = 5V, I D = 50mA
1.6
2.4
2
3
3.75
1.5
Ω
Ω
Ω
Ω
V
V
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10V, V DS = 2V
V DS = 2V, I D = 0.2A
500
80
mA
mS
Dynamic Characteristics
C iss
Input Capacitance
50
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V, f = 1.0MHz
25
5
pF
pF
Switching Characteristics
t D(ON)
t D(OFF)
Turn-On Delay Time
Turn-Off Delay Time
V DD = 30V, R L = 150 Ω , V GS = 10V,
I D = 200mA, R GEN = 25 Ω
20
60
ns
ns
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
115
0.8
mA
A
V SD
Drain-Source Diode Forward
V GS = 0V, I S = 115mA
1.1
V
Voltage
Note1 : 1. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%.
? 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
2
www.fairchildsemi.com
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